EKC2023

High-frequency ICs for optical interconnection and packages using flexible substrate technology

Aug 16, 2023, 3:55 PM

25m

Hörsaal

Electrical/Electronics Engineering & Information Technology [EI4] Innovative semiconductor devices and circuits, packaging and systems, and their scientific and industrial applications.

Speaker

Dr Jung Han Choi (Fraunhofer Heinrich-Hertz Institute)

Description

We present a 120 GBd 2.8 Vpp,diff driver for InP Mach-Zehnder modulator using 55 nm SiGe HBTs. The output impedance of the driver has a differential 2 × 25 Ω, matched to the optical modulator. The measured 3 dB bandwidth exceeds 67 GHz, and output P1dB is about 16.7 dBm at 1 GHz. The variable gain using the Gilbert-cell is implemented, and 2.1 dB gain variation is measured. The total harmonic distortion is 2.5 % at 1 GHz. The power consumption is 960 mW. The eye openings up to 120 GBd are characterized exploiting the impedance conversion IC, which is de-embedded afterwards. The post-processing of the de-embedding results in the rail-to-rail voltage output of 2.8 Vpp,diff. And, We also present a novel flexible RF substrate and interconnection technologies for > 100 GHz applications. In this contribution, the author will address flexible substrate technology for RF applications and present measurement results for test coupons. A 3 mm flexline is flip-chip bonded onto Si substrate and measured. 3 dB frequency of about 70 GHz was obtained and material parameters model for EM simulation was investigated.

References

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