Speaker
Description
The burgeoning population and industrialization around the world have resulted in an immense surge in the demand for energy [1]. To meet this need, it is crucial to develop advanced technologies that can offer reliable and efficient solutions. Power semiconductor devices are vital components of a wide range of energy conversion and control systems, including power electronics and renewable energy sources. Although silicon has traditionally been the primary material for power semiconductor devices, silicon carbide (SiC) has emerged as a promising alternative due to its superior properties such as higher thermal conductivity, higher breakdown voltage, and higher electron saturation velocity [2]. These properties lead to higher efficiency, reduced losses, and improved reliability, making SiC devices ideal for high-power, high-frequency and high-temperature applications.
This presentation aims to underscore the importance of SiC power devices and to discuss some of the manufacturing challenges associated with SiC devices. Furthermore, the presentation provides an overview of the SiC power devices that are currently being developed at Fraunhofer IISB. The different MOSFET concepts, including planar gate, trench gate and super-junction MOS transistors, and the challenges associated with each are thoroughly discussed.
References
[1] IEA – International Energy Agency, World Energy Outlook 2018.
[2] J. Millan, P. Godignon, X. Perpina, A. Perez-Tomas, J. Rebollo, A Survey of Wide Bandgap Power Semiconductor Devices, IEEE Trans. Power Electron 29 (2014) 2155-2163.
| Keywords | power semiconductor devices, wide bandgap, 4H-SiC, planar MOSFET, trench MOSFET, super-junction MOSFET, fabrication |
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